Effect of Radiation 60Со on the Photosensitivity of Overcompensated Silicon

Mahmudov Sherzod Axmadovich, Mirzaraimov Johongir Zokirjonovich, Rafikov Avaz Karimjonovich

Abstract


By measuring the Specific integral current photosensitivity from the dose of γ-quantum 60Co, the influence of γ-quantum on the photosensitivity p-Si <P, Cu>, p-Si <P, Ni>, p-Si <B, Ir> and p-Si <  B>.  It is analyzed that the appearance of band corrugation in compensated silicon is caused by fluctuations in the distribution of impurity atoms over the sample.  It was found that the greater the solubility and diffusion coefficient of impurities in silicon, the more K increases. It is proposed that a method of manufacturing photosensors based on p-Si <P, Cu> possessing increased radiation resistance up to a dose of gamma quanta of ~ 109 P is proposed.

Keywords


Thermo-And Rabation Resistance, Specifir Integral Current Photosensitivity, Flence -Quantum , Corrugation, Strong Compersation.

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DOI: http://dx.doi.org/10.52155/ijpsat.v0.0.2043

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