Carrier Energy Shift Influence on Quantum Oscillation Phenomena

G. Gulamov, K. B. Umarov, D. Zokirova

Abstract


The longitudinal electrical conductivity oscillations in narrow-gap semiconductors are investigated taking into account the Landau carrier energy shift levels. A method is developed for determining the longitudinal electrical conductivity oscillations in narrow-gap semiconductors taking into account the Landau spin-orbit splitting levels. A formula is obtained for the oscillations dependence of the longitudinal electrical conductivity on the energy, magnetic field, Fermi energy, and band gap of narrow-gap semiconductors with a non-square isotropic dispersion law.


Keywords


Narrow-Gap Semiconductor, Landau Level, Fermi Energy, Oscillation Phenomena, States Density.

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DOI: http://dx.doi.org/10.52155/ijpsat.v23.2.2416

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